IPB03N03LA |
RFQ for IPB03N03LA Required Field |
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| Technical/Catalog Information | IPB03N03LA |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 2.7 mOhm @ 55A, 10V |
| Input Capacitance (Ciss) @ Vds | 7027pF @ 15V |
| Power - Max | 150W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 57nC @ 5V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IPB03N03LA IPB03N03LA |
| Product | Manufacturers | Pack | D/C |
| IPB03N03LA | - | TO-263 | 08+ |
Features |
| • Ideal for high-frequency dc/dc converters• Qualified according to JEDEC1) for target applications• N-channel - Logic level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)• Superior thermal resistance• 175 °C operating temperature• dv /dt rated |
| Parameter | Symbol | Conditions | Value | Unit |
| Continuous drain current | ID | TC=25 2) | 80 | A |
| TC=100 | 80 | |||
| Pulsed drain current | ID,pulse | TC=25 3) | 385 | |
| Avalanche energy, single pulse | EAS | ID=80 A, RGS=25 Ω | 960 | mJ |
| Reverse diode dv /dt | dv /dt | ID=80 A, VDS=20 V, di /dt =200 A/µs, T j,max=175 |
6 | kV/µs |
| Gate source voltage4) | VGS | ±20 | V | |
| Power dissipation | Ptot | TC=25 °C | 150 | W |
| Operating and storage temperature | Tj, Tstg | -55 ...175 | ||
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
| Models | MFG | Pack |
| IPB03N03LA | TO-263 | |
| IPB03N03LAG | ||
| IPB04N03L | TO263/3 | |
| IPB04N03LA | TO-263 | |
| IPB051NE8NG | ||
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| IPB05N03 | ||
| IPB05N03L | 2004 | |
| IPB05N03LA | TO263/3 | |
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| IPB06CNE8NG | ||
| IPB06N03 | ||
| IPB06N03LA | TO-263-2 | |
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| IPB07N03L | TO263/3 | |
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